Digital CMOS interface circuit for current and capacitance sensing

Ashok Srivastava

doi:10.1117/12.540114

29 July 2004 Digital CMOS interface circuit for current and capacitance sensing

Ashok Srivastava

Proceedings Volume 5389, Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology; (2004) https://doi.org/10.1117/12.540114
Event: Smart Structures and Materials, 2004, San Diego, CA, United States

Abstract

A CMOS digital interface chip has been designed and implemented in standard 1.5 μm n-well CMOS technology for detection of current and capacitance variations across a sensing element. An on-chip digitally variable sensor element simulating current and capacitance is monolithically integrated with the readout circuitry. The chip gives an 8-bit digital output and can detect a minimum current and capacitance up to 150 μA and 2.5 fF, respectively.

Citation Download Citation

Ashok Srivastava "Digital CMOS interface circuit for current and capacitance sensing", Proc. SPIE 5389, Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology, (29 July 2004); https://doi.org/10.1117/12.540114

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