The strain distribution in Si lattice of the layer containing &#946;-FeSi<sub>2</sub> precipitates

A. F. Borun; N. P. Khmelnitskaja; Yu. N. Parkhomenko; E. G. Polyakova; E. A. Vygovskaja

doi:10.1117/12.557967

28 May 2004 The strain distribution in Si lattice of the layer containing β-FeSi₂ precipitates

A. F. Borun, N. P. Khmelnitskaja, Yu. N. Parkhomenko, E. G. Polyakova, E. A. Vygovskaja

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557967
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

On the base of the transmission electron microscopy with super-high resolution (STEM) data the behavior of the Si lattice parameters in the surroundings of β-FeSi₂ precipitates formed by ion beam synthesis (IBS) method. Despite the fact that the spots observable on the STEM image obviously are not the images of lattice atoms, the measuring of the distances between them permits to get some information about the parameters of the Si lattice in the (110)Si cross-section. Namely, it appears that β-FeSi₂ precipitates formed by the way specified above are not subjected to any substantial tensions. The important changes of lattice parameters detected are connected with a number of the defects more local. Particularly, dislocations can act as such defects.

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A. F. Borun, N. P. Khmelnitskaja, Yu. N. Parkhomenko, E. G. Polyakova, and E. A. Vygovskaja "The strain distribution in Si lattice of the layer containing β-FeSi₂ precipitates", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557967

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