Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxial stressed silicon plate

V. V. Starkov; Eugene Yu. Gavrilin; Anatoli F. Vyatkin; Vladimir I. Emel'yanov; K. Eremin

doi:10.1117/12.557928

28 May 2004 Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxial stressed silicon plate

V. V. Starkov, Eugene Yu. Gavrilin, Anatoli F. Vyatkin, Vladimir I. Emel'yanov, K. Eremin

Author Affiliations +

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557928
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

A gradual transition from quasi-hexagonal to quasi-one dimensional pore distribution during deep anodic etching of a uniaxially stressed silicon plate was experimentally observed to increase with mechanical loading.

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V. V. Starkov, Eugene Yu. Gavrilin, Anatoli F. Vyatkin, Vladimir I. Emel'yanov, and K. Eremin "Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxial stressed silicon plate", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557928

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