Dispersion-managed breathing-mode semiconductor mode-locked ring laser: experimental and numerical study

Bojan Resan; Luis Archundia; Peter J. Delfyett Jr.

doi:10.1117/12.541423

8 September 2004 Dispersion-managed breathing-mode semiconductor mode-locked ring laser: experimental and numerical study

Bojan Resan, Luis Archundia, Peter J. Delfyett Jr.

Author Affiliations +

Proceedings Volume 5413, Laser Systems Technology II; (2004) https://doi.org/10.1117/12.541423
Event: Defense and Security, 2004, Orlando, Florida, United States

Abstract

A novel dispersion-managed breathing-mode mode-locked semiconductor ring laser is studied. The working regime and pulse evolution at the key cavity points are experimentally characterized and numerically simulated. Linearly chirped, asymmetric exponential pulses are generated, suitable for external amplification and compression. The pulses are externally compressed to duration as short as 274 fs, which is within 10% of the bandwidth limit. The close agreement between the simulated and the measured results verifies our ability to control the physical mechanisms involved in pulse formation and shaping within the ring cavity.

Citation Download Citation

Bojan Resan, Luis Archundia, and Peter J. Delfyett Jr. "Dispersion-managed breathing-mode semiconductor mode-locked ring laser: experimental and numerical study", Proc. SPIE 5413, Laser Systems Technology II, (8 September 2004); https://doi.org/10.1117/12.541423

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