Recent developement of terahertz wave generation

Jun-Ichi Nishizawa

doi:10.1117/12.560679

7 April 2004 Recent developement of terahertz wave generation

Jun-Ichi Nishizawa

Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.560679
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic

Abstract

History and recent developments of terahertz devices utilizing lattice and molecular vibrations are presented. They are semiconductor Raman oscillator and amplifier, parametric generators of terahertz wave using polariton-phonons in dielectrics and semiconductors. We also present the recent advancements in the fabrication and performance of terahertz electronics devices: ISIT and ZTUNNETT diode. They are fabricated with molecular layer epitaxy (MLE), which is the most advanced nanotechnology having atomic accuracy.

Citation Download Citation

Jun-Ichi Nishizawa "Recent developement of terahertz wave generation", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); https://doi.org/10.1117/12.560679

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