Paper
3 May 2004 Spontaneous UV source based on pulsed discharge in Xe (Kr, Ar)
Mikhail I. Lomaev, D. V. Rybka, Victor F. Tarasenko, Mahadevan Krishnan, J. Thompson
Author Affiliations +
Proceedings Volume 5483, Atomic and Molecular Pulsed Lasers V; (2004) https://doi.org/10.1117/12.563014
Event: Atomic and Molecular Pulsed Lasers V, 2003, Tomsk, Russian Federation
Abstract
This paper reports on experimental results obtained during study of the source of UV spontaneous radiation based on high-current pulsed discharge in xenon and krypton being developed for the purposes of influence upon diamond detector. It has been shown that xenon lines have the highest emission spectral density in the UV range of discharge. The energy share of radiation in the range 200-250 nm with respect to the complete radiation energy in the whole control band 200-650 nm versus excitation pulse duration reaches 30-50%. Maximal density of radiation power above 50 kW/cm2 in UV range has been registered under xenon pressure of 550-650 Torr. Changing xenon for krypton (argon) lead to double decrease of emission energy. Minimal resistance of 1×3 mm2 irradiated diamond crystal, registered at the moment of current maximum in diamond detector circuit is 300.Ω.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikhail I. Lomaev, D. V. Rybka, Victor F. Tarasenko, Mahadevan Krishnan, and J. Thompson "Spontaneous UV source based on pulsed discharge in Xe (Kr, Ar)", Proc. SPIE 5483, Atomic and Molecular Pulsed Lasers V, (3 May 2004); https://doi.org/10.1117/12.563014
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KEYWORDS
Lamps

Xenon

Sensors

Diamond

Ultraviolet radiation

Krypton

Resistance

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