Mott transition of spatially indirect excitons

V. V. Nikolaev; Mikhail E. Portnoi

doi:10.1117/12.557660

2 August 2004 Mott transition of spatially indirect excitons

V. V. Nikolaev, Mikhail E. Portnoi

Proceedings Volume 5509, Nanomodeling; (2004) https://doi.org/10.1117/12.557660
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

We study an electron-hole system in double quantum wells theoretically using the powerful Green's function technique. We demonstrate that there is a temperature interval over which an abrupt jump in the value of the ionization degree occurs with an increase of the carrier density or temperature. The opposite effect, the collapse of the ionized electron-hole plasma into an insulating exciton system, should occur at lower densities. In addition, we predict that under certain conditions there will be a sharp decrease of the ionization degree with increasing temperature-the anomalous Mott transition. We discuss how these effects could be observed experimentally.

Citation Download Citation

V. V. Nikolaev and Mikhail E. Portnoi "Mott transition of spatially indirect excitons", Proc. SPIE 5509, Nanomodeling, (2 August 2004); https://doi.org/10.1117/12.557660

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