Paper
22 October 2004 Porous silicon filters for mid- to far-IR range
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Abstract
We present in this paper the development of novel mid-to-far IR filters that are based on porous silicon structures. The diameters of the pores in such filters are by orders of magnitude less than the central wavelength of the transmission band, leading to effective averaging of the porous structure by the light waves. Such filters have a number of important advantages over multilayer interference filters. Since the filters are made from a single material by means of an electrochemical etching process (rather than through deposition), these filters do not exhibit delamination problems and are well suited for operation at extreme temperatures (for example, in the environment of space). Our fabrication technique permits the fabrication of filters up to 200 mm (8 inches) in diameter, suitable for any wavelength from below 1.1 μm to more than 45 μm. The results of experimental testing of such filters are shown to prove the main predictions.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marc Christophersen, Vladimir Kochergin, and Philip R. Swinehart "Porous silicon filters for mid- to far-IR range", Proc. SPIE 5524, Novel Optical Systems Design and Optimization VII, (22 October 2004); https://doi.org/10.1117/12.557391
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Cited by 7 scholarly publications and 1 patent.
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KEYWORDS
Silicon

Optical filters

Semiconducting wafers

Etching

Optical filtering

Absorption

Far infrared

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