Direct index of refraction measurement of silicon and ruthenium at EUV wavelengths

Kristine Rosfjord; Chang Chang; David T. Attwood Jr.

doi:10.1117/12.559815

14 October 2004 Direct index of refraction measurement of silicon and ruthenium at EUV wavelengths

Kristine Rosfjord, Chang Chang, David T. Attwood Jr.

Proceedings Volume 5538, Optical Constants of Materials for UV to X-Ray Wavelengths; (2004) https://doi.org/10.1117/12.559815
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

The use of coherent radiation from undulator beamlines has been used to directly measure the real and imaginary parts of the index of refraction of several metals1. Here we extend the same interferometric technique to slightly higher energies, and measure the indices of refraction of silicon and ruthenium, essential materials for extreme ultraviolet (EUV) lithography. Both materials are tested at-wavelength (13.4 nm.) Silicon is also measured about its L2 (99.8 eV) and L3 (99.2 eV) absorption edges. This measurement technique is currently being expanded further to soft X-ray wavelengths.

Citation Download Citation

Kristine Rosfjord, Chang Chang, and David T. Attwood Jr. "Direct index of refraction measurement of silicon and ruthenium at EUV wavelengths", Proc. SPIE 5538, Optical Constants of Materials for UV to X-Ray Wavelengths, (14 October 2004); https://doi.org/10.1117/12.559815

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