Paper
21 October 2004 Role of laser pulse duration and ambient nitrogen pressure in deposition of AlN thin films
Carmen Ristoscu, Corina Gabriela Dorcioman, Gabriel Socol, Ion N. Mihailescu, Agryro Klini, Costas Fotakis
Author Affiliations +
Proceedings Volume 5581, ROMOPTO 2003: Seventh Conference on Optics; (2004) https://doi.org/10.1117/12.582815
Event: ROMOPTO 2003: Seventh Conference on Optics, 2003, Constanta, Romania
Abstract
AlN thin films with thickness in the nanometer range were prepared by Pulsed Laser Deposition technique. The extension of PLD/RPLD for obtaining good AlN nanostructures is a consequence of high reproducibility, control of the film growth rate and stoichiometry, and low impurity contamination. We investigated in this paper the effect of laser wavelength, pulse duration, and ambient gas pressure on the composition and morphology of the deposited films. We demonstrate that we deposited stoichiometric and even textured AlN thin films by PLD from AlN targets using 3 laser sources generating pulses of 34 ns@248 nm (source A), 450 fs@248 nm (source B), and 50 fs@800 nm (source C). Plamsa investigations by Optical Emission Spectroscopy and Time-of-Flight Mass Spectrometry are in agreement with the studies of films, showing plasma richer in Al ions for source A, and the prevalent presence of AlN positive ions in the plasma generated under the action of sources B and C.
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Carmen Ristoscu, Corina Gabriela Dorcioman, Gabriel Socol, Ion N. Mihailescu, Agryro Klini, and Costas Fotakis "Role of laser pulse duration and ambient nitrogen pressure in deposition of AlN thin films", Proc. SPIE 5581, ROMOPTO 2003: Seventh Conference on Optics, (21 October 2004); https://doi.org/10.1117/12.582815
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KEYWORDS
Ions

Plasma

Laser sources

Aluminum

Protactinium

Pulsed laser operation

Thin films

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