Study on 193-nm immersion interference lithography

Lon A. Wang; W. C. Chang; K. Y. Chi; S. K. Liu; C. D. Lee

doi:10.1117/12.600795

22 January 2005 Study on 193-nm immersion interference lithography

Lon A. Wang, W. C. Chang, K. Y. Chi, S. K. Liu, C. D. Lee

Proceedings Volume 5720, Micromachining Technology for Micro-Optics and Nano-Optics III; (2005) https://doi.org/10.1117/12.600795
Event: MOEMS-MEMS Micro and Nanofabrication, 2005, San Jose, California, United States

Abstract

We report bubble scattering effects on photoresist when a 193nm immersion interferometric lithographic system is employed. According to Mie theory and FDTD simulation, the scattering effect of a bubble becomes significant and may cause defects on a resist pattern when its diameter is greater than 60nm. Some preliminary experimental results are also included.

Citation Download Citation

Lon A. Wang, W. C. Chang, K. Y. Chi, S. K. Liu, and C. D. Lee "Study on 193-nm immersion interference lithography", Proc. SPIE 5720, Micromachining Technology for Micro-Optics and Nano-Optics III, (22 January 2005); https://doi.org/10.1117/12.600795

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