EUV mask blank readiness for 45-nm HP 2009 manufacturing

Phil Seidel D.D.S.

doi:10.1117/12.600544

6 May 2005 EUV mask blank readiness for 45-nm HP 2009 manufacturing

Phil Seidel D.D.S.

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.600544
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

For successful commercialization of Extreme Ultraviolet (EUV) lithography essentially defect free mask blanks are required by 2009 for the 45nm Half Pitch (HP). SEMATECH has been engaging with the mask blank materials and tool supplier community for several years and has evaluated rates of improvements against the needed alpha, beta, and production performance levels required to support EUV lithography introduction in 2009. Significant improvements in many performance levels must be achieved with simultaneous specifications including defectivity, reflectivity, wavelength control, and buffer / absorber stack performances. Although some commercial capability exists today for limited "alpha" level grade blank materials there are several orders of magnitude improvement needed in defectivity levels coupled with defect size detection sensitivity. Although coordinated regional development programs for mask blanks have high effort levels rapid improvements are required to meet the 45nm HP timing in 2009 that is just 5 short years away. Traditional supplier rates of improvements may not be enough to meet the need by 2009. This paper will illustrate the general rate of improvements and further developments or innovative solutions that may be needed in several areas. The SEMATECH EUV mask blank development roadmap will be reviewed with SEMATECH's perspective of commercial readiness predictions by 2009.

Citation Download Citation

Phil Seidel D.D.S. "EUV mask blank readiness for 45-nm HP 2009 manufacturing", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.600544

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