Structural and electrical properties of high-&#312; Al2O3-ZrO2 gate dielectrics on SOI substrate

Yan Fang Ding; G. S. Ye; N. L. Zhang; Ming Zhu; Cheng Lu Lin; Ziqiang Zhu

doi:10.1117/12.608038

8 December 2004 Structural and electrical properties of high-κ Al₂O₃-ZrO₂ gate dielectrics on SOI substrate

Yan Fang Ding, G. S. Ye, N. L. Zhang, Ming Zhu, Cheng Lu Lin, Ziqiang Zhu

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608038
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

With the rapid development of semiconductor technology, feature size of MOSFET devices is scaling down. In the meantime the scaling down of the layer thickness of the gate insulator (SiO₂) in advanced MOS devices is expected to reach its fundamental limit. But tunneling current through gate dielectrics and reliability become serious problems. From the point of view of both gate leakage current limitation and the stability and reliability of devices, it is necessary to seek some novel high κ dielectrics for low power sub-100-nm MOS transistor, whose physical thickness is big enough to suppress the tunneling effect, while at the same time keeping and increasing their capacitance.

Citation Download Citation

Yan Fang Ding, G. S. Ye, N. L. Zhang, Ming Zhu, Cheng Lu Lin, and Ziqiang Zhu "Structural and electrical properties of high-κ Al₂O₃-ZrO₂ gate dielectrics on SOI substrate", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608038

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