The studies of room-temperature electrical resistivity of post-annealed LaNiO3-ð thin film on Si(100)/n by RF magnetron sputtering

X. D. Zhang; Xiang Jian Meng; J. L. Sun; G. S. Wang; Tie Lin; Jun Hao Chu

doi:10.1117/12.608173

8 December 2004 The studies of room-temperature electrical resistivity of post-annealed LaNiO_3-δ thin film on Si(100)/n by RF magnetron sputtering

X. D. Zhang, Xiang Jian Meng, J. L. Sun, G. S. Wang, Tie Lin, Jun Hao Chu

Author Affiliations +

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608173
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Highly (100)-oriented LaNiO_3-δ (LNO) thin film were grown on n-type Si(100) at substrate temperature 200°C with 40% oxygen partial pressure. The as-deposited LNO films are metallic and have a resistivity of ~9×10^-4 mΩcm at room temperature (RT) and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A post-annealing process can decrease the RT resistivity to ~3×10^-4 Ωcm at 700°C and yield crack at 800°C.

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X. D. Zhang, Xiang Jian Meng, J. L. Sun, G. S. Wang, Tie Lin, and Jun Hao Chu "The studies of room-temperature electrical resistivity of post-annealed LaNiO_3-δ thin film on Si(100)/n by RF magnetron sputtering", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608173

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