Influence of ionized radiation on anisotropy of electric properties of indium selenide

K. A. Askerov; V. I. Gadzhieva

doi:10.1117/12.628924

7 June 2005 Influence of ionized radiation on anisotropy of electric properties of indium selenide

K. A. Askerov, V. I. Gadzhieva

Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628924
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation

Abstract

Formation and distribution of radiating defects as well as behaviour of mobility in monocrystalline samples of indium selenide with electron concentration 5•10¹⁴÷1•10¹⁶ cm^-3 have been investigated at an irradiation by gamma-quanta (with doze 10⁷ and 10⁸ R) and electrons with energy 25 MeV (with fluence 10¹⁵ e/cm²).

Citation Download Citation

K. A. Askerov and V. I. Gadzhieva "Influence of ionized radiation on anisotropy of electric properties of indium selenide", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.628924

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