AlGaAs Optoelectronic Devices On Monolithic GaAs/Si Substrates

T. H. Windhorn; G. M. Metze

doi:10.1117/12.951215

9 July 1986 AlGaAs Optoelectronic Devices On Monolithic GaAs/Si Substrates

T. H. Windhorn, G. M. Metze

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951215
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

The use of optical interconnects in systems incorporating complex Si circuits could significantly reduce the number of wire interconnects required for such systems. One possible approach to the development of optical interconnects is the monolithic integration of AlGaAs optoelectronic devices and Si circuits. However, the differences in crystal properties between GaAs and Si present a severe impediment to the growth of high-quality GaAs on Si. This paper will review recent advances in lasers and other opto-electronic devices fabricated on MGS substrates.

Citation Download Citation

T. H. Windhorn and G. M. Metze "AlGaAs Optoelectronic Devices On Monolithic GaAs/Si Substrates", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951215

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