Organic semiconductor structure and chemistry from near-edge X-ray absorption fine structure (NEXAFS) spectroscopy

Dean M. DeLongchamp; Eric K. Lin; Daniel A. Fischer

doi:10.1117/12.616776

30 August 2005 Organic semiconductor structure and chemistry from near-edge X-ray absorption fine structure (NEXAFS) spectroscopy

Dean M. DeLongchamp, Eric K. Lin, Daniel A. Fischer

Author Affiliations +

Proceedings Volume 5940, Organic Field-Effect Transistors IV; 59400A (2005) https://doi.org/10.1117/12.616776
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

The ability to measure the structural development of organic semiconductor films and correlate it to the electrical characteristics of organic devices such as thin film transistors (OTFTs) is needed to facilitate the commercialization of this technology. Synchrotron-based Near-Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy is a powerful tool that meets this need because it can non-destructively reveal both the structure and chemistry of thin organic films. The density of bonds involving Carbon, Nitrogen, Oxygen, and Fluorine can be quantified, a depth profile can be developed, and bond orientation can be determined. Here, we outline the principles of NEXAFS experimentation and data analysis with an emphasis on their application to organic semiconductor thin films. NEXAFS spectra of model organic semiconductors such as pentacene and poly(3-hexylthiophene) (P3HT) are used to demonstrate how NEXAFS can enhance understanding of the complex processing-structure relationships of semiconductor film formation and identify processing methods that may optimize device performance.

Citation Download Citation

Dean M. DeLongchamp, Eric K. Lin, and Daniel A. Fischer "Organic semiconductor structure and chemistry from near-edge X-ray absorption fine structure (NEXAFS) spectroscopy", Proc. SPIE 5940, Organic Field-Effect Transistors IV, 59400A (30 August 2005); https://doi.org/10.1117/12.616776

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