The response time of GaN photoconductive detector under various ultraviolet-radiation intensities

Jintong Xu; Yinwen Tang; Xiangyang Li; Haimei Gong; Degang Zhao

doi:10.1117/12.625061

17 October 2005 The response time of GaN photoconductive detector under various ultraviolet-radiation intensities

Jintong Xu, Yinwen Tang, Xiangyang Li, Haimei Gong, Degang Zhao

Proceedings Volume 5964, Detectors and Associated Signal Processing II; 59640Z (2005) https://doi.org/10.1117/12.625061
Event: Optical Systems Design 2005, 2005, Jena, Germany

Abstract

The persistent photoconductivity (PPC) effect was generally observed in many III-V compound semiconductors and it was always related to yellow luminescence. In this paper, the PPC effect in unintentionally doped GaN was investigated. The GaN photoconductive detector response time measured by changing the chopper frequency of modulator was studied under various ultraviolet-radiation intensities. The maximum value of UV intensities used in test was approximately 0.2W/m². Experimental results show that the response time of unintentionally doped GaN PC detector is independent of the wavelength of the ultraviolet radiation in the range of 300~365nm and it decreases with the increasing of UV radiation intensity. The longest response time getting in experiments was 7.64ms and the shortest 2.89ms. Fourier transformation and lock-in amplifier was used to reduce the noise at AC frequency of 50Hz and the results show that Fourier transformation was more effective to eliminate the low frequency noise. The experimental data fit the theoretical curve very well, better than the results reported previously. Finally, these phenomena were tried to be explained using a mechanism that minor carriers were captured by deep acceptors. The deep acceptors were deduced to be V_Ga related complexes. In strong UV radiation, the photo-generated holes (minor carriers) were no longer captured by deep acceptors and the recombination opportunities with majority carriers were increased. Consequently the response time was reduced. The other possible reason was that there were metastable states which were related to Ga vacancy.

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Jintong Xu, Yinwen Tang, Xiangyang Li, Haimei Gong, and Degang Zhao "The response time of GaN photoconductive detector under various ultraviolet-radiation intensities", Proc. SPIE 5964, Detectors and Associated Signal Processing II, 59640Z (17 October 2005); https://doi.org/10.1117/12.625061

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KEYWORDS

Gallium nitride

Ultraviolet radiation

Sensors

Modulators

Gallium

Luminescence

Optical filters

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