Antiphase states of sub-nanosecond Cr,Yb:YAG microchip self-Q-switched multimode laser

Jun Dong; Akira Shirakawa; Ken-ichi Ueda

doi:10.1117/12.634969

5 December 2005 Antiphase states of sub-nanosecond Cr,Yb:YAG microchip self-Q-switched multimode laser

Jun Dong, Akira Shirakawa, Ken-ichi Ueda

Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60201C (2005) https://doi.org/10.1117/12.634969
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

The antiphase states were observed experimentally in a laser-diode pumped sub-nanosecond microchip Cr,Yb:YAG self-Q-switched multimode laser which is resulted from the spatial hole burning effect. The stable two-mode, and three-mode oscillation are obtained with the increase of the pump power ratio. The modified multimode rate equations including the spatial hole-burning effect in the active medium and the non-linear absorption of the saturable absorber is proposed. The numerical simulations of the antiphase dynamics of such laser are in good agreement with the experimental data and the antiphase dynamics was explained by the evolution of the inversion population and the bleaching and recovery of the inversion population of the saturable absorber.

Citation Download Citation

Jun Dong, Akira Shirakawa, and Ken-ichi Ueda "Antiphase states of sub-nanosecond Cr,Yb:YAG microchip self-Q-switched multimode laser", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60201C (5 December 2005); https://doi.org/10.1117/12.634969

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KEYWORDS

Absorption

Pulsed laser operation

Numerical simulations

Crystals

Q switched lasers

Chromium

Hole burning spectroscopy

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