Investigation of the III-V oxidation process for the fabrication of sub-micron three dimensional photonic devices

Kierthi Swaminathan; Janusz Murakowski; Chris Schuetz; Garrett J. Schneider; Bhargav S. Citla; Dennis W. Prather

doi:10.1117/12.647157

23 January 2006 Investigation of the III-V oxidation process for the fabrication of sub-micron three dimensional photonic devices

Kierthi Swaminathan, Janusz Murakowski, Chris Schuetz, Garrett J. Schneider, Bhargav S. Citla, Dennis W. Prather

Author Affiliations +

Proceedings Volume 6110, Micromachining Technology for Micro-Optics and Nano-Optics IV; 61100P (2006) https://doi.org/10.1117/12.647157
Event: MOEMS-MEMS 2006 Micro and Nanofabrication, 2006, San Jose, California, United States

Abstract

The lateral oxidation of epitaxially grown Al_xGa_1-xAs layers is investigated in an open-chamber system based on a conventional horizontal tube furnace, and in a closed-chamber system. The oxidation is selective and depends on the Al content, process temperature, and process time. The process is characterized as a function of these parameters. The closed chamber system provides faster oxidation with superior control, repeatability and uniformity of the oxidation extent as compared to the open-chamber system. Based on these investigations of the oxidation reaction, we propose a unique method for realizing 3D photonic crystals in GaAs/AlGaAs-based material.

Citation Download Citation

Kierthi Swaminathan, Janusz Murakowski, Chris Schuetz, Garrett J. Schneider, Bhargav S. Citla, and Dennis W. Prather "Investigation of the III-V oxidation process for the fabrication of sub-micron three dimensional photonic devices", Proc. SPIE 6110, Micromachining Technology for Micro-Optics and Nano-Optics IV, 61100P (23 January 2006); https://doi.org/10.1117/12.647157

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