Photon-excited fluorescence of rare-earth ions-doped gasses by femtosecond laser irradiation

Masayuki Nogami; Hongpeng You

doi:10.1117/12.674043

15 February 2006 Photon-excited fluorescence of rare-earth ions-doped gasses by femtosecond laser irradiation

Masayuki Nogami, Hongpeng You

Proceedings Volume 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X; 61180N (2006) https://doi.org/10.1117/12.674043
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Local modification of Eu³⁺ ions doped in SnO₂- and Al₂O₃-SiO₂ glasses was investigated using a femtosecond laser pulse. SnO₂ nanocrystals were successfully precipitated in transparent glasses by irradiation with an 800-nm femtosecond laser. Upon laser irradiation, the Sn atoms were activated to react with oxygen, resulting in the formation of SnO₂ nanocrystals. The precipitated SnO₂ crystals grew up to ca. 5 nm size by the Joule-heating effect of the laser. The fluorescence intensities of the codoped-Eu³⁺ions were enhanced higher than 100 times that of the glass without nanocrystals by exciting with the energy corresponding to the absorption edge of the SnO₂ nanocrystals, the energy of which is effectively transferred to the Eu³⁺ ions. Near-infrared to visible up-converted fluorescence was observed in the Eu⁺³ ions doped in the Al₂O₃-SiO₂ glasses during femtosecond laser irradiation. The dependence of the intensity of the Eu³⁺-emission on the pump power reveals that the three-photon excitation is dominant in the up-conversion process. These glasses can provide a bright prospect for their optical applications.

Citation Download Citation

Masayuki Nogami and Hongpeng You "Photon-excited fluorescence of rare-earth ions-doped gasses by femtosecond laser irradiation", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180N (15 February 2006); https://doi.org/10.1117/12.674043

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