Quantum-structure dependent excitonic carrier dynamics of In<sub>x</sub>Ga<sub>1-x</sub>N/GaN multi-quantum-wells

Sangsu Hong; Yong Seok Kim; Young Joon Yoon; June Sik Park; Bae Kyun Kim; Alexander Fomin; Gyu Han Lee; Je Won Kim; Hyung Koun Cho; Taiha Joo

doi:10.1117/12.645432

3 March 2006 Quantum-structure dependent excitonic carrier dynamics of In_xGa_1-xN/GaN multi-quantum-wells

Sangsu Hong, Yong Seok Kim, Young Joon Yoon, June Sik Park, Bae Kyun Kim, Alexander Fomin, Gyu Han Lee, Je Won Kim, Hyung Koun Cho, Taiha Joo

Author Affiliations +

Proceedings Volume 6121, Gallium Nitride Materials and Devices; 612105 (2006) https://doi.org/10.1117/12.645432
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Excitonic carrier dynamics taking place in In_xGa_1-xN/GaN multi-quantum-well systems have been studied by low temperature picosecond time resolved photoluminescence (LT-TRPL), HR-TEM, XPS, Dynamic TOF-SIMS, and quantum mechanical simulation methods. Both time-integrated and time-resolved photoluminescence spectra of In_xGa_1-xN/GaN multi-quantum-wells with different well thickness and Indium composition were measured at 10 K. We assigned the natural radiative lifetime of each sample from the time resolved PL. We observed that the natural radiative lifetime of In In_xGa_1-xN/GaN multi-quantum-wells depends strongly on the well thickness and Indium composition. To support the measured natural radiative lifetimes, excitonic oscillator strengths of the In_xGa_1-xN/GaN multi-quantumwells were calculated by using a 2-D particle-in-a-box model as functions of well thickness and Indium composition. Values of the well thickness and Indium compositions from the HR-TEM and XPS compositional depth profiling were used to achieve more realistic computational results and to corroborate the measured natural radiative lifetimes of In_xGa_1-xN/GaN multi-quantum wells.

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Sangsu Hong, Yong Seok Kim, Young Joon Yoon, June Sik Park, Bae Kyun Kim, Alexander Fomin, Gyu Han Lee, Je Won Kim, Hyung Koun Cho, and Taiha Joo "Quantum-structure dependent excitonic carrier dynamics of In_xGa_1-xN/GaN multi-quantum-wells", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 612105 (3 March 2006); https://doi.org/10.1117/12.645432

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