Fabrication and characterization of AlGaAs/GaAs multiquantum well ring lasers

Binglin Miao; Shouyuan Shi; Janusz Murakowski; Caihua Chen; Dennis W. Prather

doi:10.1117/12.647210

24 February 2006 Fabrication and characterization of AlGaAs/GaAs multiquantum well ring lasers

Binglin Miao, Shouyuan Shi, Janusz Murakowski, Caihua Chen, Dennis W. Prather

Proceedings Volume 6123, Integrated Optics: Devices, Materials, and Technologies X; 61230Z (2006) https://doi.org/10.1117/12.647210
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

In this paper, we present the design, fabrication, and characterization of large-diameter semiconductor ring lasers with a single out coupling waveguide using AlGaAs/GaAs multiquantum well wafer. We also investigate the influence of the coupling between the ring cavity and the straight waveguide on the threshold current. It was found that the threshold current reduces with the decrease of the coupling between the ring cavity and the waveguide due to the widening of the coupling gap. By optimizing the coupling gap, we achieve a device with the threshold current of as low as 49mA.

Citation Download Citation

Binglin Miao, Shouyuan Shi, Janusz Murakowski, Caihua Chen, and Dennis W. Prather "Fabrication and characterization of AlGaAs/GaAs multiquantum well ring lasers", Proc. SPIE 6123, Integrated Optics: Devices, Materials, and Technologies X, 61230Z (24 February 2006); https://doi.org/10.1117/12.647210

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