High quantum efficiency long-wave infrared photodiodes using W- structured type-II superlattices

E. H. Aifer; C. L. Canedy; J. G. Tischler; J. H. Warner; I. Vurgaftman; W. W Bewley; J. R. Meyer; E. M. Jackson; J. C. Kim; L. J. Whitman

doi:10.1117/12.660711

28 February 2006 High quantum efficiency long-wave infrared photodiodes using W- structured type-II superlattices

E. H. Aifer, C. L. Canedy, J. G. Tischler, J. H. Warner, I. Vurgaftman, W. W Bewley, J. R. Meyer, E. M. Jackson, J. C. Kim, L. J. Whitman

Author Affiliations +

Proceedings Volume 6127, Quantum Sensing and Nanophotonic Devices III; 61270T (2006) https://doi.org/10.1117/12.660711
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Recent improvements in material quality and design have led to large improvements in the quantum efficiency (QE) of long-wave infrared (LWIR) photodiodes based on W-structured type-II superlattices (WSL), which now have achieved external QE of up to 35% on an 11.3 μm cutoff photodiode operating at 80K. While single band and dual band WSLs have been demonstrated with cutoff wavelengths out to 17 μm, the initial devices also showed significant losses of photo-excited carriers resulting in QE levels of ≤ 10%. Here we describe recent results in which these losses have been dramatically reduced by modifying the WSL barrier layers to increase the mini-band width and improve the material properties. An additional 35-55% increase in QE also resulted from the use of semitransparent Te doped n-GaSb substrates that allowed for IR reflections off the backside from the Au plated chip carrier. A series of PIN photodiodes using the improved WSL, with intrinsic regions from 1 to 4 μm thick, were used to study minority carrier transport characteristics in the new structure. As a result of the improved design and material properties, the electron diffusion length in the undoped i-region, as determined from a theoretical fit to the thickness-dependent data, was 3.5 μm, allowing for much higher collection efficiency in PIN photodiodes with intrinsic regions up to 4 μm thick.

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E. H. Aifer, C. L. Canedy, J. G. Tischler, J. H. Warner, I. Vurgaftman, W. W Bewley, J. R. Meyer, E. M. Jackson, J. C. Kim, and L. J. Whitman "High quantum efficiency long-wave infrared photodiodes using W- structured type-II superlattices", Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61270T (28 February 2006); https://doi.org/10.1117/12.660711

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