Molecular resists based on cholate derivatives for electron-beam lithography

Daiju Shiono; Taku Hirayama; Hideo Hada; Junichi Onodera; Tadashi Arai; Atsuko Yamaguchi; Kyoko Kojima; Hiroshi Shiraishi; Hiroshi Fukuda

doi:10.1117/12.656949

29 March 2006 Molecular resists based on cholate derivatives for electron-beam lithography

Daiju Shiono, Taku Hirayama, Hideo Hada, Junichi Onodera, Tadashi Arai, Atsuko Yamaguchi, Kyoko Kojima, Hiroshi Shiraishi, Hiroshi Fukuda

Author Affiliations +

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61532D (2006) https://doi.org/10.1117/12.656949
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

We have designed and synthesized cholate derivatives (1,4-Bis(methyloxymethylcholate)cyclohexane: C2ChDM and 1,2-Bis(oxymethylcholate)ethane: C2E) to investigate the properties as a chemically amplified (CA) positive-tone Electron-beam (EB) resist material. C2ChDM and C2E which were easily obtained by one-step esterification from cholic acid and dichloride showed glass transition temperatures (Tgs), 85 and 84^oC, respectively. These compounds were dissolved in propylene glycol monomethyl ether acetate (PGMEA) and formed amorphous thin films onto silicon wafers by using a spin-coat method. The etch rates of C2ChDM and C2E, which were measured under CF₄/CHF₃/Ar mixed gas process, were almost the same as poly (p-hydroxystyrene) (PHS). The model resist samples were formulated with C2ChDM and C2E as base matrix and photo-acid generator (PAG) originated from sulfonium-salt (resist-A and B, respectively). These resists showed good sensitivities with EB exposure. Furthermore, the FT-IR spectra of resist-A and B films unexposed and exposed by the EB lithography tool were measured. From the spectral changes of resist-A and B films, we confirmed that a cleavage reaction of ester bond occurred by EB irradiation and bake treatment, and these resists worked as common CA positive-tone resist. The evaluation results with the resist-A and B by using EB exposure tool indicated the resolution of 120 nm lines and spaces pattern.

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Daiju Shiono, Taku Hirayama, Hideo Hada, Junichi Onodera, Tadashi Arai, Atsuko Yamaguchi, Kyoko Kojima, Hiroshi Shiraishi, and Hiroshi Fukuda "Molecular resists based on cholate derivatives for electron-beam lithography", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532D (29 March 2006); https://doi.org/10.1117/12.656949

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