In[sub]x[/sub]Ga[sub]1-x[/sub]AsySb[sub]1-y[/sub]: A Mid-Infrared Source and Detector Material

D. P. Mullin; S. A. Miller; C. M. Hanson

doi:10.1117/12.961117

12 May 1986 In_xGa_1-xAsySb_1-y: A Mid-Infrared Source and Detector Material

D. P. Mullin, S. A. Miller, C. M. Hanson

Proceedings Volume 0618, Infrared Optical Materials and Fibers IV; (1986) https://doi.org/10.1117/12.961117
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

The development of the novel heavy metal fluoride fibers with the potential for substantially reduced losses over silica fibers presents the need for sources and detectors that are specifically designed for the 2 to 4 pm mid-infrared spectral region. The III-V quaternary In_xGa_1-xAsySb_1-y is a promising material in this regard, with an energy gap range of 1.8 to 4.2 μm. 1.1quidphase epitaxy has been used to grow epitaxial layers on InAs substrates. Compositions with energy gaps near 2 μm and near 3.5 μm have been obtained.

Citation Download Citation

D. P. Mullin, S. A. Miller, and C. M. Hanson "In_xGa_1-xAsySb_1-y: A Mid-Infrared Source and Detector Material", Proc. SPIE 0618, Infrared Optical Materials and Fibers IV, (12 May 1986); https://doi.org/10.1117/12.961117

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