Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules

Lubomír Grmela; Jaroslav Kala; Pavel Tománek

doi:10.1117/12.675867

18 April 2006 Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules

Lubomír Grmela, Jaroslav Kala, Pavel Tománek

Proceedings Volume 6180, Photonics, Devices, and Systems III; 61802D (2006) https://doi.org/10.1117/12.675867
Event: Photonics, Devices, and Systems III, 2005, Prague, Czech Republic

Abstract

The use of QDs as a basis for new optoelectronic devices is very promising, due to a long electron lifetime at their excited levels. Therefore the inter- and intra-band light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. The preliminary results of experimental and theoretical studies of the optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented.

Citation Download Citation

Lubomír Grmela, Jaroslav Kala, and Pavel Tománek "Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules", Proc. SPIE 6180, Photonics, Devices, and Systems III, 61802D (18 April 2006); https://doi.org/10.1117/12.675867

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