Single-mode lasing from ZnO-SiO<sub>2</sub> thin film nanoresonators obtained by magnetron sputtering method

Alexander Gruzintsev; Gennadi Emelchenko; Carlos Barthou; Paul Benalloul; Vladimir Volkov

doi:10.1117/12.666650

18 April 2006 Single-mode lasing from ZnO-SiO₂ thin film nanoresonators obtained by magnetron sputtering method

Alexander Gruzintsev, Gennadi Emelchenko, Carlos Barthou, Paul Benalloul, Vladimir Volkov

Proceedings Volume 6182, Photonic Crystal Materials and Devices III (i.e. V); 61822C (2006) https://doi.org/10.1117/12.666650
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

Investigations of the spontaneous and stimulated emission spectra by optical pumping of ZnO layers deposited on SiO₂-Si and opal were carried out. The stimulated emission pumped under ultra violet 337 nm N₂ laser excitation was observed at 397 nm at room temperature from ZnO-SiO₂-Si type and ZnO-opal type thin film structures. The threshold pumped power for the electron-hole plasma recombination laser process is of the order of 35 MW/cm² for ZnO-SiO₂-Si and 300 KW/cm² for ZnO-opal structures.

Citation Download Citation

Alexander Gruzintsev, Gennadi Emelchenko, Carlos Barthou, Paul Benalloul, and Vladimir Volkov "Single-mode lasing from ZnO-SiO₂ thin film nanoresonators obtained by magnetron sputtering method", Proc. SPIE 6182, Photonic Crystal Materials and Devices III (i.e. V), 61822C (18 April 2006); https://doi.org/10.1117/12.666650

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