Charge carrier generation in photosensitive amorphous molecular semiconductors

Y. Barabash; V. Kharkyanen; M. Zabolotny; T. Zabolotnaya

doi:10.1117/12.679952

14 June 2006 Charge carrier generation in photosensitive amorphous molecular semiconductors

Y. Barabash, V. Kharkyanen, M. Zabolotny, T. Zabolotnaya

Proceedings Volume 6254, Seventh International Conference on Correlation Optics; 62541G (2006) https://doi.org/10.1117/12.679952
Event: Seventh International Conference on Correlation Optics, 2005, Chernivsti, Ukraine

Abstract

Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules loses his surplus energy in the time of inelastic interaction with neighbouring atoms. The results of theoretical predictions are confirmed by the experimental ones obtained for a number of molecular semiconductors (anthracene, pentacene, PVC, PEPC).

Citation Download Citation

Y. Barabash, V. Kharkyanen, M. Zabolotny, and T. Zabolotnaya "Charge carrier generation in photosensitive amorphous molecular semiconductors", Proc. SPIE 6254, Seventh International Conference on Correlation Optics, 62541G (14 June 2006); https://doi.org/10.1117/12.679952

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