X-Ray Mask Distortion: Process And Pattern Dependence

Arnold W. Yanof; Douglas J. Resnick; Constance A. Jankoski; William A. Johnson

doi:10.1117/12.963676

30 June 1986 X-Ray Mask Distortion: Process And Pattern Dependence

Arnold W. Yanof, Douglas J. Resnick, Constance A. Jankoski, William A. Johnson

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963676
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

X-Ray lithography is widely believed to occupy an important future lithographic niche in the vicinity of 0.5 micron and below."] It will be technically easier to achieve resolution and depth of focus with X-Ray than with optical steppers in this lithographic regime. It will be much less expensive to print large volume runners like Dynamic RAMs, microprocessors, or CODECs with X-Ray than with electron beam direct write. However, it is also recognized that distortion in the X-Ray mask membrane may be a major obstacle to the exploitation of this niche, because of the extraordinary registration requirements of submicron design rules.

Citation Download Citation

Arnold W. Yanof, Douglas J. Resnick, Constance A. Jankoski, and William A. Johnson "X-Ray Mask Distortion: Process And Pattern Dependence", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963676

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