Strong photoluminescence caused by optical transitions between electron and hole Tamm-like interface states in ZnSe/BeTe heterostructures

A. S. Gurevich; V. P. Kochereshko; A. N. Litvinov; A. V. Platonov; B. A. Zyakin; B. A. Waag; G. Landwehr

doi:10.1117/12.680052

30 August 2006 Strong photoluminescence caused by optical transitions between electron and hole Tamm-like interface states in ZnSe/BeTe heterostructures

A. S. Gurevich, V. P. Kochereshko, A. N. Litvinov, A. V. Platonov, B. A. Zyakin, B. A. Waag, G. Landwehr

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Proceedings Volume 6321, Nanophotonic Materials III; 632109 (2006) https://doi.org/10.1117/12.680052
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

We present an experimental data, which demonstrate a basically new mechanism of carrier radiative recombination in semiconductor heterostructures-recombination via Tamm-like interface states. Bright line was observed in photoluminescence spectra of periodical ZnSe/BeTe heterostructures at the energies, which correspond to the optical transitions between electron and hole Tamm-like interface states in studied heterosystem. Photoluminescence via Tamm-like interface states was observed for wide range excitation densities in the temperature range from 15K to 160K. It was found that for short-period ZnSe/BeTe heterostructures at low temperatures and at low excitation densities photoluminescence via Tamm-like interface states is much stronger than conventional interband radiative recombination.

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A. S. Gurevich, V. P. Kochereshko, A. N. Litvinov, A. V. Platonov, B. A. Zyakin, B. A. Waag, and G. Landwehr "Strong photoluminescence caused by optical transitions between electron and hole Tamm-like interface states in ZnSe/BeTe heterostructures", Proc. SPIE 6321, Nanophotonic Materials III, 632109 (30 August 2006); https://doi.org/10.1117/12.680052

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