A novel high performance planar InGaAs/InAlAs avalanche photodiode

B. F. Levine; R. N. Sacks; J. Ko; M. Jazwiecki; J. A. Valdmanis; D. Gunther; J. H. Meier

doi:10.1117/12.688353

6 October 2006 A novel high performance planar InGaAs/InAlAs avalanche photodiode

B. F. Levine, R. N. Sacks, J. Ko, M. Jazwiecki, J. A. Valdmanis, D. Gunther, J. H. Meier

Proceedings Volume 6352, Optoelectronic Materials and Devices; 63521D (2006) https://doi.org/10.1117/12.688353
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea

Abstract

We discuss a new simple InGaAs/InAlAs avalanche photodiode (APD) with a planar buried multiplication region. Some of the advantages compared to standard APDs are: 1. The thickness of the avalanche and the charge control regions are accurately controlled by molecular beam epitaxy (MBE) growth in contrast to the standard diffusion process; 2. InAlAs is the multiplication material (avalanching faster electrons) instead of InP (avalanching slower holes); 3. InAlAs avalanche gain has a lower noise figure than that for InP; 4. A guard ring is not required; 5. Fabrication is as simple as that for a p-i-n detector; 6. The APD has high wafer uniformity, and high reproducibility; 7. The InAlAs breakdown voltage is lower than InP, and its variation with temperature is three times lower than that for InP; 8. Excellent aging and reliability including Telcordia GR-468 qualification for die and modules; 9. High gain-bandwidth product as high as 150GHz; and 10.High long range (LR-2) bit error rate (BER) 10^-12 receiver sensitivity of -29.0dBm at 10Gb/s, -28.1dBm at 10.7Gb/s and -27.1dBm at 12.5Gbs.

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B. F. Levine, R. N. Sacks, J. Ko, M. Jazwiecki, J. A. Valdmanis, D. Gunther, and J. H. Meier "A novel high performance planar InGaAs/InAlAs avalanche photodiode", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521D (6 October 2006); https://doi.org/10.1117/12.688353

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