Low-resistance and high-reflectivity Al based reflectors for p-GaN flip process

Seung Wan Chae; Kun Yoo Ko; Dong Woo Kim; Seok Min Hwang; Hyung Jin Park; Je Won Kim; Yong Chun Kim

doi:10.1117/12.698796

13 February 2007 Low resistance and high reflectivity Al based reflectors for p-GaN flip process

Seung Wan Chae, Kun Yoo Ko, Dong Woo Kim, Seok Min Hwang, Hyung Jin Park, Je Won Kim, Yong Chun Kim

Proceedings Volume 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI; 648617 (2007) https://doi.org/10.1117/12.698796
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We report a high-power light-emitting diode (LED) scheme based on aluminum (Al) reflector, commonly used as an n-GaN ohmic contact. The Cu doped In₂O₃ (5nm)/ITO (380nm) interlayer was deposited by electron beam evaporator and subsequently annealed at 500°C After annealing, we sputtered Al (400nm thick)/Ti-W (30nm) on the ITO interlayer to reflect the visible light. From the systematic experiment and the following analyses with InGaN/GaN multiple- quantum-well (MQW) LEDs, the reflectance of electrode based Al was measured to be ~ 90% at a wavelength of 450nm, which is higher than that of the common used Ni/Ag/Pt scheme. The forward- bias voltages of CIO/ITO/Al/Ti-W pelectrodes were as low as 3.2-3.3V. Furthermore, Al reflector showed higher thermal stability and lower leakage currents than those of typical Ag reflector, in which the mean leakage current of Ni/Ag and CIO/ITO/Al/Ti-W contacts were estimated to be 0.54, 0.12uA at an injection current of -5V, respectively.

Citation Download Citation

Seung Wan Chae, Kun Yoo Ko, Dong Woo Kim, Seok Min Hwang, Hyung Jin Park, Je Won Kim, and Yong Chun Kim "Low resistance and high reflectivity Al based reflectors for p-GaN flip process", Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 648617 (13 February 2007); https://doi.org/10.1117/12.698796

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KEYWORDS

Reflectors

Light emitting diodes

Aluminum

Silver

Reflectivity

Electrodes

Gallium nitride

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