Characterization of photo-acid redeposition in 193-nm photoresists

Thomas Wallow; Marina Plat; Zhanping Zhang; Brian MacDonald; Joffre Bernard; Jeremias Romero; Bruno La Fontaine; Harry J. Levinson

doi:10.1117/12.712338

22 March 2007 Characterization of photo-acid redeposition in 193-nm photoresists

Thomas Wallow, Marina Plat, Zhanping Zhang, Brian MacDonald, Joffre Bernard, Jeremias Romero, Bruno La Fontaine, Harry J. Levinson

Author Affiliations +

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65190T (2007) https://doi.org/10.1117/12.712338
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Time-of-flight secondary-ion mass spectrometry (TOF-SIMS) imaging is demonstrated as a sensitive qualitative method for characterizing surface acid concentrations and accompanying chemical changes at resist surfaces. We show its utility in analyzing the 'chemical flare' phenomenon associated with some chemically amplified photoresists. Two commercial 193 nm photoresists were studied: 'photoresist A' displays lithographic defects linked to chemical flare at die edges; 'photoresist B' does not. TOF-SIMS imaging of the surface of 'photoresist A' following exposure and post-exposure bake (PEB) reveals that die edge defects are well correlated with pronounced emanation of surface acid concentrations from, and blocking group depletion beyond, the die edge. Both photoresists also exhibit longer-range surface acidification that is not well correlated with lithographic effects. A plurality of evidence leads us to infer that photoacid migration from exposed to unexposed regions underlies the lithographic defects observed in 'photoresist A.'

Citation Download Citation

Thomas Wallow, Marina Plat, Zhanping Zhang, Brian MacDonald, Joffre Bernard, Jeremias Romero, Bruno La Fontaine, and Harry J. Levinson "Characterization of photo-acid redeposition in 193-nm photoresists", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65190T (22 March 2007); https://doi.org/10.1117/12.712338

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