Paper
8 June 2007 Noise characteristic and quality investigation of ultrafast avalanche photodiodes
S. Pralgauskaitė, V. Palenskis, J. Matukas, A. Vizbaras
Author Affiliations +
Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66000L (2007) https://doi.org/10.1117/12.724626
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy
Abstract
A detailed study of photosensitivity and noise characteristics of ultrafast InGaAsP/InP avalanche photodiodes with separate absorption, grading, charge and multiplication regions was carried out. Carrier multiplication and noise factors were evaluated. Noise origin in investigated APDs is 1/f, generation-recombination and shot noises. Different quality samples have been investigated and it is shown that noise characteristics well reflect APD quality problems. It is shown that low-frequency noise and excess shot noise characteristics are very sensitive to the APD quality problems and clear up physical processes in device structure. Noise characteristic analyses can be used for the APD quality problems revealing and optimal design development.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Pralgauskaitė, V. Palenskis, J. Matukas, and A. Vizbaras "Noise characteristic and quality investigation of ultrafast avalanche photodiodes", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66000L (8 June 2007); https://doi.org/10.1117/12.724626
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Avalanche photodetectors

Avalanche photodiodes

Ionization

Ultrafast phenomena

Absorption

Photodiodes

Semiconductor lasers

Back to Top