Noises of p-i-n UV photodetectors

Ferdinand V. Gasparyan; Can E. Korman; Slavik V. Melkonyan

doi:10.1117/12.724623

11 June 2007 Noises of p-i-n UV photodetectors

Ferdinand V. Gasparyan, Can E. Korman, Slavik V. Melkonyan

Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66001L (2007) https://doi.org/10.1117/12.724623
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy

Abstract

Investigations of the static characteristics, responsivity, internal noises, and detectivity of the forward biased p-i-n photodetectors made on wide bandgap compensated semiconductors operating in double injection regime are presented. Noise related calculations are performed by utilizing "Impedance Field Method". Numerical simulations are made assessing 4H-SiC and GaN biased p-i-n photodiodes noise related characteristics. It is shown that forward biased p-i-n photodiodes have low level of thermal and generation-recombination noises and high values of sensitivity and detectivity at the room temperature.

Citation Download Citation

Ferdinand V. Gasparyan, Can E. Korman, and Slavik V. Melkonyan "Noises of p-i-n UV photodetectors", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66001L (11 June 2007); https://doi.org/10.1117/12.724623

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