Paper
11 September 2007 Metal oxide semiconductors in PEC splitting of water
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Abstract
With hydrogen being accepted as fuel for the future, the world is looking forward to development of clean and sustainable methods of its production from renewable energy. In this context, area of research in the PEC splitting of water assumes great significance and the challenge is to develop corrosion resistant, chemically stable semiconductor that absorbs sunlight in the visible region and also has the band edges matching to the redox level of water. The advent of nanotechnology has opened new vistas in the production of semiconductor with large surface area for solar energy absorption and other favourable properties, which has lead to restudy the old workhorses, viz α-Fe2O3 and TiO2 in the PEC splitting of water. This communication reports the study on metal oxides, towards the photoelectrochemical splitting of water as function of material properties and characteristics of semiconductor- electrolyte junction, viz; particle size, suitable dopants, crystalline phase, surface morphology, resistivity, bandgap, donor density and flatband potential. Effect of sensitizers and surface modification has also been investigated. Both the techniques of surface modification: (i) depositing metal dots and (ii) swift heavy ion irradiation in α-Fe2O3 were observed to be much effective in improving the photoresponse of the material. α-Fe2O3 thin films prepared using spray pyrolysis having Zn dots (dot height: 260 Å) on its surface exhibited the best of photocurrent density (1.82 mA/cm2), at 0.6 V applied bias. Nitrogen doped nanostructured TiO2 prepared by sol gel method exhibited much better photoresponse as compared to any other dopant.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vibha R. Satsangi "Metal oxide semiconductors in PEC splitting of water", Proc. SPIE 6650, Solar Hydrogen and Nanotechnology II, 66500D (11 September 2007); https://doi.org/10.1117/12.734795
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Cited by 4 scholarly publications.
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KEYWORDS
Zinc

Doping

Iron

Thin films

Ions

Oxides

Semiconductors

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