Measurement of ultra low film stress, local stress distribution and flatness by imaging nanotopography based on low coherence phase shifting interferometry in conjunction with wafer and film thickness metrology

Alexander Pravdivtsev; Manuel Santos II; Ann Koo

doi:10.1117/12.732711

10 September 2007 Measurement of ultra low film stress, local stress distribution and flatness by imaging nanotopography based on low coherence phase shifting interferometry in conjunction with wafer and film thickness metrology

Alexander Pravdivtsev, Manuel Santos II, Ann Koo

Author Affiliations +

Proceedings Volume 6672, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies III; 66720P (2007) https://doi.org/10.1117/12.732711
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

Tighter specifications for the deposition of thin, highly uniform films with low stress require new stress measurement techniques to resolve smallest deformations on the Nanometer scale. Uniformity maps need to cover measurement areas from a few millimeters up to whole 300 mm semiconductor wafers, which include small dies as well as lithography areas. Metrology able to measure sample's flatness, nanotopography and film stress components on all the variety of the samples, is very urgent today. Its accuracy and reproducibility should be at nanometers. We discuss a combined solution using complementary measurements of nanotopography, substrate thickness and film thickness, for the stress analysis and stress uniformity measurement on samples with thin films and with very low stress causing shallow deformations having a curvature radius up to several kilometers.

Citation Download Citation

Alexander Pravdivtsev, Manuel Santos II, and Ann Koo "Measurement of ultra low film stress, local stress distribution and flatness by imaging nanotopography based on low coherence phase shifting interferometry in conjunction with wafer and film thickness metrology", Proc. SPIE 6672, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies III, 66720P (10 September 2007); https://doi.org/10.1117/12.732711

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Interferometers

Metrology

Semiconducting wafers

Thin films

Coherence (optics)

Phase interferometry

Fizeau interferometers

Show All Keywords

Keywords/Phrases

Search In:

Publication Years