A new Si/CdTe semiconductor Compton camera developed for high-angular resolution

Shin'ichiro Takeda; Shin-nosuke Ishikawa; Hirokazu Odaka; Shin Watanabe; Tadayuki Takahashi; Kazuhiro Nakazawa; Hiroyasu Tajima; Yoshikatsu Kuroda; Mitsunobu Onishi; Yasushi Fukazawa; Hajimu Yasuda

doi:10.1117/12.733840

21 September 2007 A new Si/CdTe semiconductor Compton camera developed for high-angular resolution

Shin'ichiro Takeda, Shin-nosuke Ishikawa, Hirokazu Odaka, Shin Watanabe, Tadayuki Takahashi, Kazuhiro Nakazawa, Hiroyasu Tajima, Yoshikatsu Kuroda, Mitsunobu Onishi, Yasushi Fukazawa, Hajimu Yasuda

Author Affiliations +

Proceedings Volume 6706, Hard X-Ray and Gamma-Ray Detector Physics IX; 67060S (2007) https://doi.org/10.1117/12.733840
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

A semiconductor Compton camera for a balloon borne experiment aiming at observation in high energy astrophysics is developed. The camera is based on the concept of the Si/CdTe semiconductor Compton Camera, which features high-energy and high-angular resolution in the energy range from several tens of keV to a few MeV. It consists of tightly packed double-sided silicon strip detectors (DSSDs) stacked in four layers, and a total of 32 CdTe pixel detectors surrounding them. The Compton reconstruction was successfully performed and gamma-ray images were obtained from 511 keV down to 59.5 keV. The Angular Resolution Measure (ARM) at 511 keV is ~ 2.5 degrees, thanks to the high energy resolution in both the DSSD and CdTe parts.

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Shin'ichiro Takeda, Shin-nosuke Ishikawa, Hirokazu Odaka, Shin Watanabe, Tadayuki Takahashi, Kazuhiro Nakazawa, Hiroyasu Tajima, Yoshikatsu Kuroda, Mitsunobu Onishi, Yasushi Fukazawa, and Hajimu Yasuda "A new Si/CdTe semiconductor Compton camera developed for high-angular resolution", Proc. SPIE 6706, Hard X-Ray and Gamma-Ray Detector Physics IX, 67060S (21 September 2007); https://doi.org/10.1117/12.733840

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