Design and evaluation of corner compensation patterns for anisotropic etching

Xing Chen; Dong Weon Lee; Jong Sung Park

doi:10.1117/12.787617

6 December 2007 Design and evaluation of corner compensation patterns for anisotropic etching

Xing Chen, Dong Weon Lee, Jong Sung Park

Proceedings Volume 6723, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment; 672364 (2007) https://doi.org/10.1117/12.787617
Event: 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, 2007, Chengdu, China

Abstract

This paper reports corner compensation methods for fabricating the intact mesa structure in MEMS (Micro-Electro-Mechanical System). To investigate the undercutting problem in the mesa structure, over ten corner compensation patterns are designed by computing the relations among a series of parameters, e.g. etching rates in different crystal planes, etching depth, etching times, etc. The compensation patterns are then simulated by the simulation software Anisotropic Crystalline Etch Simulation (ACES) beta 2, the 3D etching simulations are gotten. Various new compensation structures preventing the undercutting of convex corners of (100) silicon in THAH solution are redesigned and optimized based on the simulation results, the fabrication are conducted to verify the feasibility of the corner compensation patterns.

Citation Download Citation

Xing Chen, Dong Weon Lee, and Jong Sung Park "Design and evaluation of corner compensation patterns for anisotropic etching", Proc. SPIE 6723, 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 672364 (6 December 2007); https://doi.org/10.1117/12.787617

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KEYWORDS

Etching

Anisotropic etching

Crystals

Silicon

Wet etching

Device simulation

Photomasks

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