Electronically tunable plasmonic grating-gate terahertz detectors

E. A. Shaner; A. D. Grine; S. K. Lyo; J. L. Reno; M. C. Wanke; S. J. Allen

doi:10.1117/12.738968

25 September 2007 Electronically tunable plasmonic grating-gate terahertz detectors

E. A. Shaner, A. D. Grine, S. K. Lyo, J. L. Reno, M. C. Wanke, S. J. Allen

Proceedings Volume 6760, Infrared, Mid-IR, and Terahertz Technologies for Health and the Environment II; 67600B (2007) https://doi.org/10.1117/12.738968
Event: Optics East, 2007, Boston, MA, United States

Abstract

Split grating-gate field effect transistors (FETs) detectors made from high mobility quantum well two-dimensional electron gas material have been shown to exhibit greatly improved tunable resonant photoresponse compared to single grating-gate detectors due to the formation of a 'diode-like' element by the split-gate structure. These detectors are relatively large for FETs (1mm x 1mm area or larger) to match typical focused THz beam spot sizes. In the case where the focused THz spot size is smaller than the detector area, we have found evidence, through positional scanning of the detector element, that only a small portion of the detector is active. To further investigate this situation, detectors with the same channel width (1mm), but various channel lengths, were fabricated and tested. The results indicate that indeed, only a small portion of the split grating gated FET is active. This finding opens up the possibility for further enhancement of detector sensitivity by increasing the active area.

Citation Download Citation

E. A. Shaner, A. D. Grine, S. K. Lyo, J. L. Reno, M. C. Wanke, and S. J. Allen "Electronically tunable plasmonic grating-gate terahertz detectors", Proc. SPIE 6760, Infrared, Mid-IR, and Terahertz Technologies for Health and the Environment II, 67600B (25 September 2007); https://doi.org/10.1117/12.738968

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KEYWORDS

Sensors

Plasmons

Quantum wells

Field effect transistors

Terahertz radiation

Millimeter wave sensors

Plasmonics

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