Paper
25 September 2007 Percolation transport in single-walled carbon nanotube films: experiment and simulation
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Abstract
We present the scaling of percolation resistivity in nanotube films as a function of nanotube and device parameters both experimentally and using simulations. We first characterize the resistivity of these films down to 200 nm lateral dimensions by fabricating standard four-point-probe structures. We find that the film resistivity starts to increase at device widths below 20 microns, and exhibits an inverse power law dependence on width below a critical width of 2 microns. We then use quasi-3D Monte Carlo simulations to model and fit these experimental results. In addition to fitting the experimental data, we also study the effect of four parameters, namely nanotube density, length, alignment, and measurement direction on resistivity and its scaling with device width. We explain these simulation results by simple physical and geometrical arguments. Nanoscale study of percolation transport mechanisms in nanotube films is essential for understanding and characterizing their performance in nanosensing device applications.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ant Ural, Ashkan Behnam, Jason Johnson, and Yongho Choi "Percolation transport in single-walled carbon nanotube films: experiment and simulation", Proc. SPIE 6769, Nanosensing: Materials, Devices, and Systems III, 67690B (25 September 2007); https://doi.org/10.1117/12.732878
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Cited by 2 scholarly publications.
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KEYWORDS
Monte Carlo methods

Single walled carbon nanotubes

Resistance

Composites

Computer simulations

Electrodes

Electron beam lithography

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