Ion-Assisted Processes In Optical Thin Film Deposition

R P Netterfield

doi:10.1117/12.939534

23 December 1986 Ion-Assisted Processes In Optical Thin Film Deposition

R P Netterfield

Proceedings Volume 0678, Optical Thin Films II: New Developments; (1986) https://doi.org/10.1117/12.939534
Event: 30th Annual Technical Symposium, 1986, San Diego, United States

Abstract

The microstructure, crystallinity, and stoichiometry of vacuum deposited thin films are modified substantially if the layer is bombarded by ions during growth. The properties of optical films prepared by ion-assistance are often superior to those produced in vapor deposition. These ion-induced modifications will be explained in terms of recently developed theories and computer simulations.

Citation Download Citation

R P Netterfield "Ion-Assisted Processes In Optical Thin Film Deposition", Proc. SPIE 0678, Optical Thin Films II: New Developments, (23 December 1986); https://doi.org/10.1117/12.939534

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