The investigations of InAs quantum dots overgrown on In0.1Ga0.9As surfactant layer and 10º off-angle (100) GaAs substrate

Shiang-Feng Tang; Min-Yu Hsu; Cheng-Der Chiang; C.-C. Su; Chuan-Pu Liu; Yu-Ching Fang

doi:10.1117/12.759448

9 January 2008 The investigations of InAs quantum dots overgrown on In_0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate

Shiang-Feng Tang, Min-Yu Hsu, Cheng-Der Chiang, C.-C. Su, Chuan-Pu Liu, Yu-Ching Fang

Author Affiliations +

Proceedings Volume 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV; 68001E (2008) https://doi.org/10.1117/12.759448
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia

Abstract

For propose of achieving the high coherent quantum dots or the expected spectral emission, we have proposed the epitaxial method solved by using self-organized grown on the In_xGa_1-xAs relaxed layer and the mis-orientated GaAs substrates. In this study, using extra slow growth rate of 0.075ML/sec to grow the quantum dot matrix under the temperature of 500°C by the general Riber 32P solid-source MBE system, the high surface density and uniformity in size of two-stacked of quantum dot (QD) matrix have been established. The temperature dependences of the full widths at half-maximum (FWHM) and the positions of photoluminescence (PL) bands are studied experimentally by adding In_0.1Ga_0.9As surfactant layer and using mis-orientated substrate, respectively. The 3-dimensional QD images using atomic force microscopy (AFM) well agree with the results of above mentioned. Therefore, a systematic estimate is given of the QD structures grown on different epitaxial conditions.

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Shiang-Feng Tang, Min-Yu Hsu, Cheng-Der Chiang, C.-C. Su, Chuan-Pu Liu, and Yu-Ching Fang "The investigations of InAs quantum dots overgrown on In_0.1Ga_0.9As surfactant layer and 10° off-angle (100) GaAs substrate", Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 68001E (9 January 2008); https://doi.org/10.1117/12.759448

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