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We found that the contact resistance of Au/Pt/Ti on p-InP increases with the increase of annealing time and annealing
temperature. Au/Pt/Ti is ohmic contact metal as deposited with specific contact resistance of 2.49×10-3 Ωcm2 when p-InP
doped by 7.5×1018 cm-3 and is Schottky contact when doped by 2×1018 cm-3. Surface morphologies of Au/Pt/Ti after rapid
thermal processing (RTP) were analyzed by atom force microscopy (AFM). An interface layer dominated by TiIn
compound, which increase the specific contact resistance, was found in Auger electron spectroscopy (AES) analysis.
P-InP and n-InP ohmic contacts can be achieved at the same time as deposited when added p-In0.53Ga0.47As layer on
p-InP/InGaAs/n-InP without annealing.
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