Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect

Hongping Zhao; Ronald A. Arif; Yik Khoon Ee; Nelson Tansu

doi:10.1117/12.763804

22 February 2008 Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect

Hongping Zhao, Ronald A. Arif, Yik Khoon Ee, Nelson Tansu

Author Affiliations +

Proceedings Volume 6889, Physics and Simulation of Optoelectronic Devices XVI; 688903 (2008) https://doi.org/10.1117/12.763804
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Strain-compensated InGaN quantum well (QW) active region employing tensile AlGaN barriers was analyzed as improved gain media for laser diodes emitting at 430-440 nm by taking into account the carrier screening effect. The use of strain-compensated InGaN-AlGaN structure is advantageous because the tensile barriers compensate the compressive strain in the InGaN QW and the larger band offset allows high temperature operation. The band structure is calculated by using a 6-band k times p formalism, taking into account valence band mixing, strain effect, spontaneous and piezoelectric polarizations. The carrier screening effect is incorporated in the calculation, which is solved self-consistently. The spontaneous emission spectra show a significant improvement of the radiative emission for strain-compensated structure. The optical gain analysis shows enhancement in the peak optical gain for the strain-compensated QW structures. Threshold analysis of both the conventional InGaN-GaN QW and strain-compensated InGaN-AlGaN QW active regions indicate a reduction in the threshold carrier density and threshold current density for diode laser employing the strain-compensated QW as its active region.

Citation Download Citation

Hongping Zhao, Ronald A. Arif, Yik Khoon Ee, and Nelson Tansu "Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688903 (22 February 2008); https://doi.org/10.1117/12.763804

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