Design of automatic controllers for model-based OPC with optimal resist threshold determination for improving correction convergence

Yi-Sheng Su; Philip C. W. Ng; Kuen-Yu Tsai; Yung-Yaw Chen

doi:10.1117/12.772397

7 March 2008 Design of automatic controllers for model-based OPC with optimal resist threshold determination for improving correction convergence

Yi-Sheng Su, Philip C. W. Ng, Kuen-Yu Tsai, Yung-Yaw Chen

Author Affiliations +

Proceedings Volume 6924, Optical Microlithography XXI; 69243Z (2008) https://doi.org/10.1117/12.772397
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Model-based Optical Proximity Correction (MBOPC) has become one of the most important resolution enhancement technologies (RETs), which can effectively improve the image fidelity and process robustness. MBOPC is performed by iteratively shifting the polygon edges of mask patterns until convergence requirements are achieved. In this paper, we specifically discuss the design of feedback controllers to improve MBOPC convergence. Effective controller design rules are derived from the OPC results of several circuit layouts. Meanwhile, resist models also significantly affect MBOPC convergence. Two kinds of resist model have been proposed for MBOPC such as constant threshold resist model (CTRM) and variable threshold resist model (VTRM). We propose a novel CTRM, called pattern-based optimal threshold determination (PBOTD). By normalized mean square error (NMSE) formulation, appropriate threshold values with minimum NMSE can be determined to improve image fidelity, and effectively decrease iterations required. The effectiveness of applying both optimized controller and PBOTD is demonstrated on a 90-nm SRAM cell.

Citation Download Citation

Yi-Sheng Su, Philip C. W. Ng, Kuen-Yu Tsai, and Yung-Yaw Chen "Design of automatic controllers for model-based OPC with optimal resist threshold determination for improving correction convergence", Proc. SPIE 6924, Optical Microlithography XXI, 69243Z (7 March 2008); https://doi.org/10.1117/12.772397

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