Václav Prajzler,1 Ivan Hüttel,2 Jarmila Spirková,2 Jirí Oswald,3 Vratislav Perina,4 Vitezslav Jerábek1
1Czech Technical Univ. in Prague (Czech Republic) 2Institute of Chemical Technology (Czech Republic) 3Institute of Physics (Czech Republic) 4Nuclear Physics Institute (Czech Republic)
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We report about fabrication and properties of Gallium Nitride (GaN) layers doped with erbium or mixture of erbium and
ytterbium ions. Transmission spectra in the spectral range from 280 to 800 nm taken by the spectrometer Varian Cary
50 showed that the increasing concentration of the dopants shifts the absorption edge to the lower wavelengths. Optical
band gap Eg was determined from the absorption coefficient values using Tauc's procedure and the obtained values
varied from 3.08 eV to 3.89 eV depending on the erbium or erbium plus ytterbium doping. Photoluminescence emission
at 1 530 nm due to the Er3+ intra-4f
4I13/2 → 4I15/2 transition was observed by using excitation of semiconductor lasers
operating at 980 nm.
Václav Prajzler,Ivan Hüttel,Jarmila Spirková,Jirí Oswald,Vratislav Perina, andVitezslav Jerábek
"Investigation of GaN layers doped with Er3+ and Er3+ + Yb3+ ions using the transmittance measurement", Proc. SPIE 7138, Photonics, Devices, and Systems IV, 71381B (18 November 2008); https://doi.org/10.1117/12.818015
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Václav Prajzler, Ivan Hüttel, Jarmila Spirková, Jirí Oswald, Vratislav Perina, Vitezslav Jerábek, "Investigation of GaN layers doped with Er3+ and Er3+ + Yb3+ ions using the transmittance measurement," Proc. SPIE 7138, Photonics, Devices, and Systems IV, 71381B (18 November 2008); https://doi.org/10.1117/12.818015