Design and fabrication of ultrafast coplanar strip photoconductive switch based on low-temperature grown GaAs

Tian Lan; Guoqiang Ni

doi:10.1117/12.812075

9 February 2009 Design and fabrication of ultrafast coplanar strip photoconductive switch based on low-temperature grown GaAs

Tian Lan, Guoqiang Ni

Author Affiliations +

Proceedings Volume 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration; 71581K (2009) https://doi.org/10.1117/12.812075
Event: International Conference of Optical Instrument and Technology, 2008, Beijing, China

Abstract

This paper reports the design and preparation of ultra-fast photoconductive (PC) switch made from a 500 nm thick low temperature grown GaAs (LT-GaAs) on a transparent quartz glass substrate. After the procedures of photolithography, etching, evaporation etc., coplanar strip (CPS) transmission lines of Au/Pt with width and spacing of 10 μm and thickness of 600 nm are evaporated on the substrate of LT-GaAs. The photoconductive switch has ideal dark resistance, good I-V performance and photoelectric linearity under an exposure of weak light. The dark current is about 0.1 pA at a bias voltage of 10 V. The typical risetime of the photoconductive switch is 1.3 ps measured by pump-probe technique with a mode-locked Ti: sapphire laser with pulse width of 100 fs, wavelength of 800 nm, and frequency of 100 MHz.

Citation Download Citation

Tian Lan and Guoqiang Ni "Design and fabrication of ultrafast coplanar strip photoconductive switch based on low-temperature grown GaAs", Proc. SPIE 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration, 71581K (9 February 2009); https://doi.org/10.1117/12.812075

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