Analysis of thermoelectric characteristics of AlGaN and InGaN semiconductors

Hua Tong; Hongping Zhao; Vincent A Handara; Juan A Herbsommer; Nelson Tansu

doi:10.1117/12.809079

24 February 2009 Analysis of thermoelectric characteristics of AlGaN and InGaN semiconductors

Hua Tong, Hongping Zhao, Vincent A Handara, Juan A Herbsommer, Nelson Tansu

Proceedings Volume 7211, Physics and Simulation of Optoelectronic Devices XVII; 721103 (2009) https://doi.org/10.1117/12.809079
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

The thermoelectric properties of AlGaN and InGaN semiconductors are analyzed. In our analysis, the thermal conductivities, electrical conductivities, Seebeck coefficients, and figure of merits (Z*T) of AlGaN and InGaN semiconductors are computed. The electron transports in AlGaN and InGaN alloys are analyzed by solving Boltzmann transport equation, taking into account the dominant mechanisms of energy-dependent electron scatterings. Virtual crystal model is implemented to simulate the lattice thermal conductivity from phonon scattering for both AlGaN and InGaN alloys. The calculated Z*T is as high as 0.15 for optimized InGaN alloy at temperature around 1000 K. For optimized AlGaN composition, the Z*T of 0.06-0.07 can be achieved. The improved thermoelectric performance of ternary alloys over binary alloys can be attributed to the reduced lattice thermal conductivity.

Citation Download Citation

Hua Tong, Hongping Zhao, Vincent A Handara, Juan A Herbsommer, and Nelson Tansu "Analysis of thermoelectric characteristics of AlGaN and InGaN semiconductors", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 721103 (24 February 2009); https://doi.org/10.1117/12.809079

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